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2SJ665-DL-1EX

Manufacturer: ON Semiconductor
REK ID: 135789

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 27A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V 
FET Feature 
Power Dissipation (Max) 65W (Tc) 
Rds On (Max) @ Id, Vgs 77 mOhm @ 14A, 10V 
Operating Temperature 150°C (TA) 
Mounting Type Surface Mount 
Supplier Device Package TO-263-2 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET P-CH 100V 27A TO263 - P-Channel 100V 27A (Ta) 65W (Tc) Surface Mount TO-263-2

Transistors 2SJ665-DL-1EX

Datasheet 2SJ665-DL-1EX (PDF)

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2SJ665-DL-1EX
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