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2SJ652-RA11

Manufacturer: ON Semiconductor
REK ID: 132949

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 28A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 20V 
FET Feature 
Power Dissipation (Max) 
Rds On (Max) @ Id, Vgs 38 mOhm @ 14A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220ML 
Package / Case TO-220-3 Full Pack 

Description

MOSFET P-CH 60V 28A TO-220ML - P-Channel 60V 28A (Ta) Through Hole TO-220ML

Transistors 2SJ652-RA11

Price (check the terms and price with the managers)
Available: 10 psc.
Price available upon request
2SJ652-RA11
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