| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-267AB |
| Package / Case | TO-267AB |
MOSFET P-CH 100V SMD1 - P-Channel 100V 18A (Tc) 4W (Ta), 125W (Tc) Surface Mount TO-267AB
Transistors 2N7236U
The manager will inform you of the total cost including delivery.