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2N7000BU_T

Manufacturer: ON Semiconductor
REK ID: 136281

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Bulk  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 3V @ 1mA 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 
FET Feature 
Power Dissipation (Max) 400mW (Ta) 
Rds On (Max) @ Id, Vgs 5 Ohm @ 500mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-92-3 
Package / Case TO-226-3, TO-92-3 (TO-226AA) 
Base Part Number 2N7000 

Description

MOSFET N-CH 60V TO92 - N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

Transistors 2N7000BU_T

Price (check the terms and price with the managers)
Available: 17 psc.
Price available upon request
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