Manufacturer | ON Semiconductor |
Series | - |
Packaging | Bulk |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 400mW (Ta) |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Base Part Number | 2N7000 |
MOSFET N-CH 60V TO92 - N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
Transistors 2N7000BU_T
The manager will inform you of the total cost including delivery.