| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 320 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AF Metal Can |
MOSFET P-CH 100V TO-205AF TO-39 - P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Transistors 2N6849
The manager will inform you of the total cost including delivery.