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2N6800

Manufacturer: Microsemi Corporation
REK ID: 134679

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Bulk  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 400V 
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 5.75nC @ 10V 
Vgs (Max) ±20V 
FET Feature 
Power Dissipation (Max) 800mW (Ta), 25W (Tc) 
Rds On (Max) @ Id, Vgs 1 Ohm @ 2A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-39 
Package / Case TO-205AF Metal Can 

Description

MOSFET N-CH 400V TO-205AF TO-39 - N-Channel 400V 3A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Transistors 2N6800

Price (check the terms and price with the managers)
Available: 17 psc.
Price available upon request
2N6800
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