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2N6768

Manufacturer: Microsemi Corporation
REK ID: 134666

Technical Information

Manufacturer Microsemi Corporation 
Series 
Packaging Bulk  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 400V 
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V 
Vgs (Max) ±20V 
FET Feature 
Power Dissipation (Max) 4W (Ta), 150W (Tc) 
Rds On (Max) @ Id, Vgs 400 mOhm @ 14A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-3 
Package / Case TO-204AE 

Description

MOSFET N-CH 400V TO-204AE TO-3 - N-Channel 400V 14A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3

Transistors 2N6768

Datasheet 2N6768 (PDF)

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