| Manufacturer | Microsemi Corporation |
| Series | - |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3 |
| Package / Case | TO-204AE |
MOSFET N-CH 200V TO-204AE TO-3 - N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3
Transistors 2N6766
The manager will inform you of the total cost including delivery.