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2N6661-E3

Manufacturer: Vishay Siliconix
REK ID: 134891

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 90V 
Current - Continuous Drain (Id) @ 25°C 860mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 
Vgs(th) (Max) @ Id 2V @ 1mA 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 
FET Feature 
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc) 
Rds On (Max) @ Id, Vgs 4 Ohm @ 1A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-39 
Package / Case TO-205AD, TO-39-3 Metal Can 

Description

MOSFET N-CH 90V 0.86A TO-205 - N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

Transistors 2N6661-E3

Datasheet 2N6661-E3 (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
Price available upon request
2N6661-E3
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