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2N6660

Manufacturer: Vishay Siliconix
REK ID: 134881

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 990mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 
Vgs(th) (Max) @ Id 2V @ 1mA 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 
FET Feature 
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc) 
Rds On (Max) @ Id, Vgs 3 Ohm @ 1A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-205AF (TO-39) 
Package / Case TO-205AD, TO-39-3 Metal Can 

Description

MOSFET N-CH 60V 0.99A TO-205 - N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AF (TO-39)

Transistors 2N6660

Datasheet 2N6660 (PDF)

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2N6660
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